SiC
Third Generation
The provided text appears to be specifications for silicon carbide (SiC) wafers of various sizes (2 inches, 3 inches, 4 inches, and 6 inches). These wafers are semiconductor materials used in the prod..
Description
The provided text appears to be specifications for silicon carbide (SiC) wafers of various sizes (2 inches, 3 inches, 4 inches, and 6 inches). These wafers are semiconductor materials used in the production of high-temperature, high-frequency, and high-power electronic devices, particularly power chips for applications such as solar inverters, wind power generation, hybrid vehicles, and electric cars.
Here's a summary of the information for each wafer size:
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Grade
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Production
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Research grade
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Dummy Grade
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Diameter
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50.8 mm ±0.38 mm (2 inches)
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Thickness
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330 μm ±25 μm
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Crystal Orientation
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On axis : <0001> ±0.5° for 6H-N/4H-N/4H-SI/6H-SI
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Off axis: 4.0° toward 1120 ±0.5° for 4H-N/4H-SI
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|||
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Dislocation Density (cm-2)
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≤5
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≤15
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≤50
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Resistivity (Ω·cm)
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4H-N
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0.015~0.028 Ω·cm
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6H-N
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0.02~0.1
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4/6H-SI
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>1E5
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(90%) >1E5
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|||
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Main Flat Orientation
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{10-10} ±5.0°
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Main Flat Length (mm)
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15.9 ±1.7
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Minor Flat Length (mm)
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8.0 ±1.7
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Minor Flat Orientation
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Silicon face up: 90° CW. from Prime flat ±5.0°
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Edge Exclusion
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1 mm
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TTV/Bow/Warp (um)
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≤15 / ≤25 / ≤25
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Surface Roughness
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Polish Ra≤1 nm
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CMP Ra≤0.5 nm
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|||||
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Cracks (Bright light observation) #
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None
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None
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1 allowed, ≤1 mm
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Hexagonal Holes (Bright light observation) *
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Cumulative area≤1%
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Cumulative area≤1%
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Cumulative area≤3%
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Polymorphism (Bright light observation) *
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None
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Cumulative area≤2%
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Cumulative area≤5%
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Scratches (Bright light observation) *
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3 scratches to 1×wafer diameter cumulative length
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5 scratches to 1×wafer diameter cumulative length
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8 scratches to 1×wafer diameter cumulative length
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||
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Chipping #
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None
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3 allowed, ≤0.5 mm each
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5 allowed, ≤1 mm each
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Surface Contamination (Bright light observation)
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None
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3-Inch Specification
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Grade
|
Production
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Research grade
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Dummy Grade
|
||
| Diameter | 76.2±0.38mm (3 inches) | ||||
|
Thickness
|
350 μm±25μm
|
||||
|
Crystal Orientation
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On axis ： <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI
|
Off axis：4.0° toward 1120±0.5° for 4H-N/4H-SI
|
|||
|
Dislocation Density (cm-2)
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≤5
|
≤15
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≤50
|
||
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Resistivity (Ω·cm)
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4H-N
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0.015~0.028 Ω·cm
|
|||
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6H-N
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0.02~0.1
|
||||
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4/6H-SI
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>1E5
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(90%) >1E5
|
|||
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Main Flat Orientation
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{10-10}±5.0°
|
||||
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Main Flat Length (mm)
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22.2 mm±3.2 mm
|
||||
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Minor Flat Length (mm)
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11.2 mm±1.5 mm
|
||||
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Minor Flat Orientation
|
Silicon face up： 90° CW. from Prime flat ±5.0°
|
||||
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Edge Exclusion
|
2 mm
|
||||
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TTV/Bow/Warp (um)
|
≤15 /≤25 /≤35
|
||||
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Surface Roughness
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Polish Ra≤1 nm
|
||||
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CMP Ra≤0.5 nm
|
|||||
|
Cracks (Bright light observation) #
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None
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1 allowed，≤1 mm
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1 allowed， ≤2 mm
|
||
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Hexagonal Holes (Bright light observation) *
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Cumulative area≤1 %
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Cumulative area≤1 %
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Cumulative area≤3 %
|
||
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Polymorphism (Bright light observation)*
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None
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Cumulative area≤2 %
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Cumulative area≤5%
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||
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Scratches (Bright light observation)*
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3 scratches to1×wafer diameter cumulative length
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5 scratches to 1×wafer diameter cumulative length
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8 scratches to 2×wafer diameter cumulative length
|
||
|
Chipping #
|
None
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3 allowed，≤0.5 mm each
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5 allowed，≤1 mm each
|
||
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Surface Contamination (Bright light observation)
|
None
|
||||
4-Inch Specification
|
Grade
|
Production
|
Research grade
|
Dummy Grade
|
||
|
Diameter
|
100±0.5mm (4 inches) | ||||
|
Thickness
|
350 μm±25μm
|
||||
|
Crystal Orientation
|
On axis ： <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI
|
Off axis：4.0° toward 1120±0.5° for 4H-N/4H-SI
|
|||
|
Dislocation Density (cm-2)
|
≤5
|
≤15
|
≤50
|
||
|
Resistivity (Ω·cm)
|
4H-N
|
0.015~0.028 Ω·cm
|
|||
|
6H-N
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0.02~0.1
|
||||
|
4/6H-SI
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>1E5
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(90%) >1E5
|
|||
|
Main Flat Orientation
|
{10-10}±5.0°
|
||||
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Main Flat Length (mm)
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32.5±2.5mm
|
||||
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Minor Flat Length (mm)
|
18.0±2mm
|
||||
|
Minor Flat Orientation
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Silicon face up： 90° CW. from Prime flat ±5.0°
|
||||
|
Edge Exclusion
|
3mm
|
||||
|
TTV/Bow/Warp (um)
|
≤15 /≤25 /≤40
|
||||
|
Surface Roughness
|
Polish Ra≤1 nm
|
||||
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CMP Ra≤0.5 nm
|
|||||
|
Cracks (Bright light observation) #
|
None
|
1 allowed，≤2 mm
|
Cumulative length ≤ 10mm, single length≤2mm
|
||
|
Hexagonal Holes (Bright light observation) *
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Cumulative area≤1 %
|
Cumulative area≤1 %
|
Cumulative area≤3 %
|
||
|
Polymorphism (Bright light observation)*
|
None
|
Cumulative area≤2 %
|
Cumulative area≤5%
|
||
|
Scratches (Bright light observation)*
|
3 scratches to1×wafer diameter cumulative length
|
5 scratches to 1×wafer diameter cumulative length
|
5 scratches to 1×wafer diameter cumulative length
|
||
|
Chipping #
|
None
|
3 allowed，≤0.5 mm each
|
5 allowed，≤1 mm each
|
||
|
Surface Contamination (Bright light observation)
|
None
|
||||
6-Inch Specification
|
Grade
|
Production
|
Research grade
|
Dummy Grade
|
||
|
Diameter
|
150±2.0mm (6 inches) | ||||
|
Thickness
|
350 μm±25μm
|
||||
|
Crystal Orientation
|
On axis ： <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI
|
Off axis：4.0° toward 1120±0.5° for 4H-N/4H-SI
|
|||
|
Dislocation Density (cm-2)
|
≤5
|
≤15
|
≤50
|
||
|
Resistivity (Ω·cm)
|
4H-N
|
0.015~0.028 Ω·cm
|
|||
|
4/6H-SI
|
>1E5
|
||||
|
Main Flat Orientation
|
{10-10}±5.0°
|
||||
|
Main Flat Length (mm)
|
47.5 mm±2.5 mm
|
||||
|
Edge Exclusion
|
3mm
|
||||
|
TTV/Bow/Warp (um)
|
≤15 /≤40 /≤60
|
||||
|
Surface Roughness
|
Polish Ra≤1 nm
|
||||
|
CMP Ra≤0.5 nm
|
|||||
|
Cracks (Bright light observation) #
|
None
|
1 allowed，≤2 mm
|
Cumulative length ≤ 10mm, single length ≤ 2mm
|
||
|
Hexagonal Voids (Bright light observation) *
|
Cumulative area ≤ 1 %
|
Cumulative area ≤ 2 %
|
Cumulative area ≤ 5%
|
||
|
Polymorphism (Bright light observation) *
|
None
|
Cumulative area ≤ 2 %
|
Cumulative area ≤ 5%
|
||
|
Scratches (Bright light observation) *
|
3 scratches to 1×wafer diameter cumulative length
|
5 scratches to 1×wafer diameter cumulative length
|
5 scratches to 1×wafer diameter cumulative length
|
||
|
Chipping #
|
None
|
3 allowed，≤0.5 mm each
|
5 allowed，≤1 mm each
|
||
|
Surface Contamination (Bright light observation)
|
None
|
||||
