GaN
Third Generation
Description
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Conduct Type
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Semi-Insulating
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N
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N
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Type/Dopant
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Fe
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Ge
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Undoped
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Size
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10*10.5 mm，50.8± 0.1 mm
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Orientation
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C-plane (0001) off angle toward M-Axis0.35°±0.15°
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Total Thickness
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350 ± 25 µm
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Surface front
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Polished
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OF location/length
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(1-100) ± 0.5°/16.0 ± 1.0 mm
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IF location/length
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(11-20) ± 3°/ 8.0 ± 1.0 mm
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Resistivity（300K）
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>1E6 ohm·cm
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<0.05 Ω·cm
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<0.5 Ω·cm
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EPD
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(1~9)E5/ cm2
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5E5~3E6/ cm2
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（1~3）E6/ cm2
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Ingot CC
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>6E16/cm3
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Ra(nm)
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Front surface Ra<0.2nm
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TTV(um)
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<15
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BOW(um)
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<20
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Warp(um)
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<20
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Epi-ready
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Yes
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Package
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Single in 100 class room
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