InP
Second Generation
Description
- Size: 2 inch, 3 inch and 4 inch
- Surface: Single Side Polished, Double Side Polished
- Thickness: 350 um, 500 um and 625 um.
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Growth Method
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VGF
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Diameter
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2inch/3inch/4inch
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Type/Dopant
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Un
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N/S/Sn
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P/Zn
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Orientation
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<100> ±0.5°
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Surface
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Polished/Etched
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Epi-ready
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Yes
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Package
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Cassette or single
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Size
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2inch
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3inch
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4inch
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Diameter（mm）
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50.8±0.3
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76.2±0.3
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100±0.3
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Thickness(um)
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350±25
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625±25
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625±25
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OF(mm)
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16±2
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22±2
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32.5±2
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IF(mm)
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8±2
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12±2
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18±2
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TTV(um)
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<10
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<15
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<15
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BOW(um)
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<15
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<15
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<15
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Warp(um)
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<15
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<15
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<15
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Electrical parameters
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Dopant
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Conduct Type
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Ingot CC(/cm3)
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Mobility (cm2/v.s)
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Resistivity （Ω·cm）
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EPD(/cm3)
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Undoped
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N
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3E16
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>1700
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/
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<5E4
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S-InP
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N
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（0.5~5）E18
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（1~4）E3
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/
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<5E4
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Fe-InP
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N
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（0.1~1）E8
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>1700
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>1E7
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<5E4
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Zn-InP
|
P
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(0.6~6）E18
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>50
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/
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<5E4
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