GaAs

Second Generation

Parameter Actual Values ..

Description

Parameter
Actual Values
UOM
Parameter
Guaranteed / Actual Values
UOM
Growth Method
VGF
 
Growth Method
VGF
 
Conduct Type
S-C-N
 
Conduct Type
S-C-P
 
Dopant
GaAs-Si
 
Dopant
GaAs-Zn
 
Diameter
50.7± 0.1
mm
Diameter
76.2± 0.3
mm
Orientation
(100) 20 ± 0.50 off toward(011)
 
Orientation
(100)± 0.50 
 
OF location/length
EJ [ 0-1-1]± 0.50/16±1
  
OF location/length
EJ [ 0-1-1]± 0.50/22±1
  
IF location/length
EJ [ 0-1 1 ]± 0.50/ 7±1
         
IF location/length
EJ [ 0-1 1 ]± 0.50/12±1
         
Ingot CC
Min: 0.518 E  Max: 1.7 E+18
/cm3
Ingot CC
Min: 5.1 E+19  Max: 5.8 E+19
/cm3
Resistivity
Min: 1.9 E-3  Max:6.1E-3
Ω·cm
Resistivity
Min: N/A
Ω·cm
Mobility
Min: 1913    Max:2616
cm2/v.s
Mobility
Min: 71    Max: 72
cm2/v.s
EPD
Min:50      Max: 100
/ cm2
EPD
Min: 600   Max: 800
/cm2
Thickness
350±20
µm
Thickness
625±20
µm
Edge Rounding
0.25
mmR
Edge Rounding
0.25
mmR
Laser Marking
N/A
 
Laser Marking
Front side
 
TTV
<10
µm
TTV
< 15
µm
TIR
<10
µm
TIR
< 15
µm
BOW
<10
µm
BOW
< 15
µm
Warp
<10
µm
Warp
< 15
µm
Surface Finish– front
Polished   
 
Surface Finish– front
Polished   
 
Surface Finish –back
Etched
 
Surface Finish –back
Polished  
 
Partical Count
<50/ wafer (for particle> 0.3µm)
 
Partical Count
<50/ wafer (for particle> 0.3µm2)
 
Epi-Ready
Yes
 
Epi-Ready
Yes

 

  • Size: 1 " ,2" ,3",4",6" ;
  • Orientation: 100),(111)with 2°、4°、6°、10°、16°
  • Type: N type-Si, P type-Zn, Undoped
  • Tichkness:

 

Parameter
Guaranteed / Actual Values
UOM
Parameter
Guaranteed / Actual Values
UOM
Growth Method:
VGF
 
Growth Method:
VGF
 
Conduct Type:
S-I-N
 
Conduct Type:
S-I-N
 
Dopant:
Undoped
 
Dopant:
Undoped
 
Diameter:
50.7± 0.1
mm
Diameter:
100.0± 0.2
mm
Orientation:
(100)± 0.50
 
Orientation:
(100)± 0.30
 
OF location/length:
EJ [ 0-1-1]± 0.50/16±1
 
OF location/length:
EJ [ 0-1-1]± 0.50/32.5±1
 
IF location/length:
EJ [ 0-1 1 ]± 0.50/7±1
 
IF location/length:
EJ [ 0-1 1 ]± 0.50/18±1
 
Resistivity:
Min: 1.0 E8
Max: 2.2 E8
Ω·cm
Resistivity:
Min: 1.5 E8
Max: 2.0 E8
Ω·cm
Mobility:
Min: 4500
Max: 5482
cm2/v.s
Mobility:
Min: 4832
Max: 4979
cm2/v.s
EPD:
Min: 700
Max: 800
/ cm2
EPD:
Min: 600
Max: 700
/ cm2
Thickness:
350± 20
µm
Thickness:
625± 25
µm
Edge Rounding:
0.25
mmR
Edge Rounding:
0.375
mmR
Laser Marking:
N/A
 
 
 
 
TTV/TIR:
Max: 10
µm
TTV/TIR:
Max: 3
µm
BOW:
Max: 10
µm
BOW:
Max: 4
µm
Warp:
Max: 10
µm
Warp:
Max: 5
µm
Partical  Count:
<50/wafer(for particle>0.3um)
 
Partical  Count:
<100/wafer(for particle>0.3um)
 
Surface Finish– front:
Polished  
 
Surface Finish– front:
Polished  
 
Surface Finish –back:
Etched
 
Surface Finish –back:
Polished
 
Epi-Ready:
Yes
 
Epi-Ready:
Yes

 

Contact Me