GaAs
Second Generation
Parameter
Actual Values
..
Description
Parameter
|
Actual Values
|
UOM
|
Parameter
|
Guaranteed / Actual Values
|
UOM
|
Growth Method
|
VGF
|
|
Growth Method
|
VGF
|
|
Conduct Type
|
S-C-N
|
|
Conduct Type
|
S-C-P
|
|
Dopant
|
GaAs-Si
|
|
Dopant
|
GaAs-Zn
|
|
Diameter
|
50.7± 0.1
|
mm
|
Diameter
|
76.2± 0.3
|
mm
|
Orientation
|
(100) 20 ± 0.50 off toward(011)
|
|
Orientation
|
(100)± 0.50
|
|
OF location/length
|
EJ [ 0-1-1]± 0.50/16±1
|
|
OF location/length
|
EJ [ 0-1-1]± 0.50/22±1
|
|
IF location/length
|
EJ [ 0-1 1 ]± 0.50/ 7±1
|
|
IF location/length
|
EJ [ 0-1 1 ]± 0.50/12±1
|
|
Ingot CC
|
Min: 0.518 E Max: 1.7 E+18
|
/cm3
|
Ingot CC
|
Min: 5.1 E+19 Max: 5.8 E+19
|
/cm3
|
Resistivity
|
Min: 1.9 E-3 Max:6.1E-3
|
Ω·cm
|
Resistivity
|
Min: N/A
|
Ω·cm
|
Mobility
|
Min: 1913 Max:2616
|
cm2/v.s
|
Mobility
|
Min: 71 Max: 72
|
cm2/v.s
|
EPD
|
Min:50 Max: 100
|
/ cm2
|
EPD
|
Min: 600 Max: 800
|
/cm2
|
Thickness
|
350±20
|
µm
|
Thickness
|
625±20
|
µm
|
Edge Rounding
|
0.25
|
mmR
|
Edge Rounding
|
0.25
|
mmR
|
Laser Marking
|
N/A
|
|
Laser Marking
|
Front side
|
|
TTV
|
<10
|
µm
|
TTV
|
< 15
|
µm
|
TIR
|
<10
|
µm
|
TIR
|
< 15
|
µm
|
BOW
|
<10
|
µm
|
BOW
|
< 15
|
µm
|
Warp
|
<10
|
µm
|
Warp
|
< 15
|
µm
|
Surface Finish– front
|
Polished
|
|
Surface Finish– front
|
Polished
|
|
Surface Finish –back
|
Etched
|
|
Surface Finish –back
|
Polished
|
|
Partical Count
|
<50/ wafer (for particle> 0.3µm)
|
|
Partical Count
|
<50/ wafer (for particle> 0.3µm2)
|
|
Epi-Ready
|
Yes
|
|
Epi-Ready
|
Yes
|
- Size: 1 " ,2" ,3",4",6" ;
- Orientation: 100),(111)with 2°、4°、6°、10°、16°
- Type: N type-Si, P type-Zn, Undoped
- Tichkness:
Parameter
|
Guaranteed / Actual Values
|
UOM
|
Parameter
|
Guaranteed / Actual Values
|
UOM
|
||
Growth Method:
|
VGF
|
|
Growth Method:
|
VGF
|
|
||
Conduct Type:
|
S-I-N
|
|
Conduct Type:
|
S-I-N
|
|
||
Dopant:
|
Undoped
|
|
Dopant:
|
Undoped
|
|
||
Diameter:
|
50.7± 0.1
|
mm
|
Diameter:
|
100.0± 0.2
|
mm
|
||
Orientation:
|
(100)± 0.50
|
|
Orientation:
|
(100)± 0.30
|
|
||
OF location/length:
|
EJ [ 0-1-1]± 0.50/16±1
|
|
OF location/length:
|
EJ [ 0-1-1]± 0.50/32.5±1
|
|
||
IF location/length:
|
EJ [ 0-1 1 ]± 0.50/7±1
|
|
IF location/length:
|
EJ [ 0-1 1 ]± 0.50/18±1
|
|
||
Resistivity:
|
Min: 1.0 E8
|
Max: 2.2 E8
|
Ω·cm
|
Resistivity:
|
Min: 1.5 E8
|
Max: 2.0 E8
|
Ω·cm
|
Mobility:
|
Min: 4500
|
Max: 5482
|
cm2/v.s
|
Mobility:
|
Min: 4832
|
Max: 4979
|
cm2/v.s
|
EPD:
|
Min: 700
|
Max: 800
|
/ cm2
|
EPD:
|
Min: 600
|
Max: 700
|
/ cm2
|
Thickness:
|
350± 20
|
µm
|
Thickness:
|
625± 25
|
µm
|
||
Edge Rounding:
|
0.25
|
mmR
|
Edge Rounding:
|
0.375
|
mmR
|
||
Laser Marking:
|
N/A
|
|
|
|
|
||
TTV/TIR:
|
Max: 10
|
µm
|
TTV/TIR:
|
Max: 3
|
µm
|
||
BOW:
|
Max: 10
|
µm
|
BOW:
|
Max: 4
|
µm
|
||
Warp:
|
Max: 10
|
µm
|
Warp:
|
Max: 5
|
µm
|
||
Partical Count:
|
<50/wafer(for particle>0.3um)
|
|
Partical Count:
|
<100/wafer(for particle>0.3um)
|
|
||
Surface Finish– front:
|
Polished
|
|
Surface Finish– front:
|
Polished
|
|
||
Surface Finish –back:
|
Etched
|
|
Surface Finish –back:
|
Polished
|
|
||
Epi-Ready:
|
Yes
|
|
Epi-Ready:
|
Yes
|