Silicon
First Generation
Description
- Growing: CZ, MCZ
- Size: 1 inch to 6 inch, 8 inch and 12 inch and other customized
- Surface: SSP, DSP and Etched
- Orientation: <100>, <111>, <110> and others
- Thickness: 25 um, 50um, 100um, 200 um and the standard thickness: 280 um to 1 mm and > 1mm.
- Type: N type, P type and intrinsic
- Resistivity: Heavy doping: <0.0015 Ω.cm, Light doping: 1-100 Ω.cm, intrinsic: >1000 to > 20000 Ω.cm
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| Single Crystal Silicon Rod | 1-12 Inch Single Crystal Silicon Wafer | Ultra-Thin Silicon Wafer | Ultra-Thick Silicon Wafer | ||||
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Growth Method
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Zone Melting (FZ), Neutron Transmutation Doping Zone Melting (NTDFZ), etc.
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Diameter
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2 inches, 3 inches
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4 inches, 5 inches
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6 inches
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8 inches
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12 inches
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Orientation
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<100><111><110>
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<100><111><110> Special Orientation
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<100><111><110>
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<100><111><110>
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<100>
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Tichkness（um）
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25um,50,280,400,500,1000,2000,
as required |
20um,100um, 200,450,500,525,1000,2000,3000,5000,
as required |
625,650,675,1000,1500,
as required |
650,700,725,1200,1500,
as required |
700,775,as required
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Resistivity（Ω.cm）
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0.001,>1,>100,>1000,>10000,>20000
as required |
0.001,>1,>100,>1000,>10000,>20000
as required |
0.001,>1,>100,>1000,>10000,>20000
as required |
0.001 ,>1,>100,>1000,>10000
as required |
>1,>100,>1000,>10000
as required |
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TTV（um）
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<10,<5,<3
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<10,<5,<3
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<10,<5,<3
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<10,<5,<3,＜1
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<10,<5，<3,＜1
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Bow（um）
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<20
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<20
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<30
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<30
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<40
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Warp（um）
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<30
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<30
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<40
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<40
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<50
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Roughness（n m）
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<0.2，0.5
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<0.2，0.5
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<0.2，0.5
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<0.2，0.5
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<0.2，0.5
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Particles
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<20@0.3as required
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<20@0.3as required
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<20@0.3as required
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<20@0.3，as required
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<20@0.3，as required
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FZ Zone Float-Zone High-Resistivity Silicon Wafer
- Growth Method: Float-Zone (FZ), Neutron-Transmutation-Doped Float-Zone (NTDFZ), etc.
- Dimensions: 1", 2", 3", 4", 5", 6", 8", 12", and special non-standard diameters and shaped silicon wafers.
- Surface: Single-side polished, double-side polished, ground, etc.
- Orientation: <100>, <111>, <110> orientation, and special orientations with tilted angles.
- Thickness: Ultra-thin 25um, 50um, 100um, 200um, etc. Common thickness: 280um-1mm. Ultra-thick: 1mm, 2mm, 5mm, etc.
- Conduction Type: Non-doped semi-insulating.
- Resistivity: >1Ω·cm, >1000Ω·cm, >3000Ω·cm, >5000Ω·cm, >10000Ω·cm, >20000Ω·cm.
- Applications: Infrared optics, terahertz field; rectifiers, field-effect transistors, power integrated circuits, RF, high-voltage diodes, sensors, etc.
- Processing: Can be processed with oxidation, nitridation, and metal film deposition (silver Ag, gold Au, platinum Pt, copper Cu, titanium Ti, nickel Ni).
- Supply Capacity: Large inventory in stock, complete varieties, and same-day shipping!
- Processing Capacity: Various specifications can be processed, tailored to customer needs! Short lead time!
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Diameter
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2 inches, 3 inches
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4 inches, 5 inches
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6 inches
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8 inches
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12 inches
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Orientation
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<100><111>
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<100><111><110> Special Orientation
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<100><111>
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<100><111>
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<100>
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Thickness (um)
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>50, 280, 400, 500, 1000, 2000, as required
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200, 450, 500, 525, 1000, 2000, 3000, 5000,
as required |
625, 650, 675, 1000, 1500, as required
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650, 700, 725, 1200, 1500,
as required |
700, 775, as required
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Resistivity (Ω.cm)
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<1, >1, >100, >1000, >10000, >20000
as required |
<1, >1, >100, >1000, >10000, >20000
as required |
<1, >1, >100, >1000, >10000, >20000
as required |
>1, >100, >1000, >10000
as required |
>1, >100, >1000, >10000
as required |
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TTV (um)
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<10, <5, <3
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<10, <5, <3
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<10, <5, <3
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<10, <5, <3
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<10, <5
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Bow (um)
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<20
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<20
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<30
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<40
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<50
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Warp (um)
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<20
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<20
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<30
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<40
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<50
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Roughness (nm)
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<0.2
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<0.2
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<0.2
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<0.2
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<0.2
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Particles
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<10@0.3
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<10@0.3
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<10@0.3
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<20@0.2
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<20@0.3
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